Study on New Structures of EST to inhibit snapback effect and enhance MCC
This paper proposes two novel structures, namely the Improved planar Emitter Switched Thyristor with the introduction of the CS layer and the Trench-Planar Emitter Switched Thyristor (TP-EST) combining planar gate and trench gate, which address the snapback effect in the traditional planar-gate EST structure. Based on the abovementioned two devices, the p<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> well region in the structure is replaced with a shallow p<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">++</sup> layer to increase the maximum controllable current.
Authors
- Wuhua Yang (ORCID: https://orcid.org/0000-0003-4025-9087)
- Cailin Wang (ORCID: https://orcid.org/0000-0001-7708-5362)
- Chao Zhang (ORCID: https://orcid.org/0000-0002-3295-8980)
- Jia Li-ping
- Shen Sihao
- Guo Jiarui
Institutions
- Xi'an University of Science and Technology (CN)
- Xi'an University of Technology (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11184002
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00