Junction Temperature Fluctuation Suppression Strategy for SiC MOSFETs Based on Equivalent Gate Resistance Control

Power electronic devices are critical in the conversion, transmission, and control of electric energy, and they have an impact on power network expansion and performance in the future. Wind power [1] and wireless power transfer (WPT) technology [2] are two examples of new energy technologies that are intrinsically tied to the support of power electronic devices. Researching how to increase the reliability of power devices, and consequently improving the safety of power electronic systems, is of practical value and significance. Temperature is the key factor limiting the dependability of SiC MOSFETs, accounting for roughly 55% [3] .