Optimization Design of High-Speed and High-Voltage Switching Transient Characteristics for GaN HEMTs Using Multi-Objective Particle Swarm Optimization

Wide-Bandgap (WBG) devices, such as Gallium Nitride High Electron Mobility Transistors (GaN HEMT), have become core components in efficient power conversion systems due to their high switching speed and low conduction resistance. While WBG devices can significantly reduce switching losses and improve system efficiency, their high-speed switching introduces transient issues like overcurrent and overvoltage during switching process, which can affect the device's safety. Therefore, a balance between high efficiency and reliability must be found. To predict the high-speed switching characteristics of GaN HEMT, an accurate analysis model based on the device's datasheet is proposed in this paper. Building on this model, a Multi-Objective Particle Swarm Optimization (MOPSO) algorithm is used to optimize design parameters including gate resistance and parasitic inductance, ensuring the best balance between switching loss and device safe operation. The MOPSO algorithm improves system efficiency and suppresses overcurrent and overvoltage issues through global search and the generation of Pareto-Optimal solutions. The findings provide a theoretical foundation and design guidance for the reliable application of GaN HEMT in efficient power conversion systems.