A Novel Integrated Power Module Package Method with SiC MOSFETs and Energy Absorber in Solid-state Circuit Breaker Application

Solid-state circuit breaker (SSCB) has emerged as a cutting-edge circuit protection solution in direct current (DC) power distribution system, showing significant supercities in tripping speed, reliability and intelligence. Compared to conventional mechanical circuit breaker, the SSCB is built up with power semiconductor and energy absorber devices, which basically determine static and dynamic characteristics of SSCB. In this paper, an integrated power module consisted of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFET) and Transient Voltage Suppressor (TVS) is proposed. This new device can play a pivotal role to optimize footprint, tripping capability and cost in SSCB application. The topology and electrical analysis of the power module are discussed. Finally, experimental results verify the feasibility and advancements of the new device, further, these findings offer valuable insights for practical engineering design.