Understanding the Role of Buffer Traps in GaN HEMTs: A Simulation Study on Dynamic R<sub>on</sub>
This work employs calibrated Technology Computer-Aided Design (TCAD) simulations to analyze buffer trap behavior under varying stress amplitude (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">stress</inf>) and duration (t<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">stress</inf>) conditions and its impact on dynamic onresistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf>) degradation. Two distinct degradation phases are identified: (I) a V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> -shift dominant phase; (II) a current collapse dominant phase without additional V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> shift. The two phases arise from the time-dependent, region-specific electron trapping within buffer layer during off-state drain stress. These findings provide insights into buffer trap dynamics and their impact on dynamic R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> degradation.
Authors
- Mengqi Fan (ORCID: https://orcid.org/0000-0001-9140-7719)
- Danfeng Mao
- Yuxi Wan (ORCID: https://orcid.org/0000-0002-2883-7035)
- Xinyue Dai (ORCID: https://orcid.org/0000-0001-9761-7119)
- Haiyang Li (ORCID: https://orcid.org/0000-0002-6658-4745)
- Yan Wang (ORCID: https://orcid.org/0000-0002-9147-1136)
- Xiaoping Wang (ORCID: https://orcid.org/0000-0002-5848-076X)
- David Zhou (ORCID: https://orcid.org/0000-0001-6066-3277)
Institutions
- Tsinghua University (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11184046
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00