Simulation study of breakdown characteristic of vertical diamond Schottky barrier diodes with different drift layer parameters and termination structures

This paper reports the effects of drift layer thickness, doping concentration, and terminal structures on the breakdown voltage and on-resistance of the vertical diamond Schottky barrier diodes (SBDs) via simulation. The results reveal that the breakdown voltage increases with the increase of the drift layer thickness and the decrease of the doping concentration until it approaches saturation. Meanwhile, the optimal drift layer length is obtained to balance the breakdown voltage and on-resistance. Through meticulous design and optimization of various terminal structures, the breakdown voltage of the SBD is significantly increased from the initial 490 V to 1980 V, while the maximum electric field in the device is effectively reduced to 3.1 MV/cm. This work provides crucial theoretical basis and technical support for the design and manufacturing of high performance power devices.