Development of a High-Power-Density SiC Module
With the rapid development of power electronics technology, power modules are increasingly applied in fields such as electric vehicles, renewable energy generation, and power systems. These applications demand higher efficiency and reliability from power modules. However, heat generated during operation causes temperature rise, which compromises performance and longevity. Additionally, parasitic inductance and thermal resistance within power modules are critical factors contributing to power losses. To address these challenges, researchers continue to explore innovative design and material technologies to minimize losses in power modules.This paper proposes a novel double-layer Direct Bonded Copper (DBC) layout design applied to a low-power module integrating sixteen chips in parallel. By arranging chips and interconnection structures on a double-layer DBC substrate, the design effectively reduces parasitic inductance and thermal resistance. Experimental results demonstrate that compared to traditional single-layer DBC layouts, the proposed design reduces parasitic inductance by approximately 40%, suppresses voltage and current oscillations, and significantly improves module efficiency and reliability. Furthermore, the double-layer DBC layout enhances thermal management capabilities, extending the operational lifespan of the module.Through comparative analysis of different chip applications, we find that the high-temperature suppression characteristics and stability of chips significantly influence module performance. Under elevated temperatures, The multi-chip integrated modules of some chips may explode. Therefore, in practical applications, the performance of a single chip and multiple chips needs to be comprehensively considered.This research provides new ideas for the design and optimization of power modules, which has important theoretical significance and practical application value. By improving the DBC layout, parasitic inductance and thermal resistance can be effectively reduced, the efficiency and reliability of power modules can be enhanced, and the overall performance of power electronic systems can be promoted.
Authors
- Xiaoshuang Hui (ORCID: https://orcid.org/0009-0005-3918-9896)
- Jiajun Yang (ORCID: https://orcid.org/0000-0002-4186-6615)
- Puqi Ning (ORCID: https://orcid.org/0009-0004-5288-2137)
Institutions
- Academy of Mathematics and Systems Science (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11183700
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00