A 3L-ANPC SiC MOSFET Power Module with Low Thermal Coupling and Parasitic Inductance
Three-level active neutral-point-clamped (ANPC) converters are particularly suitable for high-frequency, high-power-density applications owing to their superior voltage withstand capability and reduced harmonic distortion. However, its widespread adoption remains constrained by parasitic inductance from intricate circuit layouts and thermal management challenges stemming from uneven power loss distribution. To address the above challenges, this paper proposes a 3D-uniform layout double-sided cooled (3DUL) ANPC module. The proposed module uniformly arranges dies in three-dimensional space based on their loss distribution, utilizing the three-dimensional commutation loops to achieve mutual inductance cancellation, while simultaneously minimizing thermal coupling effects between the dies. The module additionally optimizes the thermal resistance and thermal coupling effects of the highest-loss die in ANPC converter, aiming to maximize the module's reliability.
Authors
- Yuming Zhang (ORCID: https://orcid.org/0000-0002-4313-2498)
- Zheng Xue (ORCID: https://orcid.org/0000-0002-0898-138X)
- Zhiyuan Qi (ORCID: https://orcid.org/0000-0003-4610-3024)
- Hao Yuan (ORCID: https://orcid.org/0000-0002-9186-4546)
- Zihao Chen (ORCID: https://orcid.org/0000-0002-4842-6321)
- Qingwen Song (ORCID: https://orcid.org/0000-0002-0642-4440)
Institutions
- Xidian University (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11183961
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00