Switching Oscillation Suppression Based on Embedded SiC Power Module With Low Parasitic Inductance for CLLC Resonant Converter
The application of SiC MOSFET in CLLC converter has received more and more attention due to its high performance. However, the parasitic inductance of the conventional TO-247 package will result in driving voltage interference and switching oscillation. This paper analyzed the influence mechanism of parasitic inductance on voltage oscillation. An embedded SiC power module with low parasitic inductance was used to suppress voltage oscillation. Experimental results show that compared with TO-247 package, the module can reduce driving voltage interference by 28.7% and drain-to-source voltage oscillation by 34.4%.
Authors
- Kelin Chen (ORCID: https://orcid.org/0000-0002-8066-2826)
- Bodong Li (ORCID: https://orcid.org/0000-0002-5678-1454)
- Jiarui Zhang (ORCID: https://orcid.org/0000-0003-4776-852X)
- Jiahui Wang (ORCID: https://orcid.org/0000-0003-3471-2666)
- Min Chen (ORCID: https://orcid.org/0000-0002-0093-9056)
- Lili Jia (ORCID: https://orcid.org/0000-0003-2336-6446)
- Feng Jiang
- Xinnan Sun
Institutions
- Zhejiang University (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11183965
- Primary Topic
- Advanced DC-DC Converters
- Type
- article
- Field-Weighted Citation Impact
- 0.00