Research on a Crosstalk Parasitic Oscillation Suppression Method Based on Series Resonance Principle

This paper proposes a crosstalk parasitic oscillation suppression method based on the series resonance principle for SiC MOSFETs. A P-channel MOSFET and an auxiliary capacitor are connected in parallel to drive the SiC MOSFETs’ gate. The gate drive's auxiliary capacitors and parasitic inductance create a low impedance loop for the parasitic oscillation, while the P-channel MOSFET provides negative feedback regulation. Theoretical analysis and experimental verification show the method can effectively suppress crosstalk parasitic oscillation during switching transients without slowing the switching speed dv/dt and keeping the gate-source voltage stable.