Multi-parameter Degradation Modeling Method for Power MOSFETs Integrating Semiconductor Physics Degradation Data

Power MOSFETs is the most important component of electronic system, and their reliability directly determines the service effectiveness of electronic system. In order to evaluate reliability of power MOSFETs, some power MOSFETs degradation modelling methods have been proposed. However, most of these methods focus only on the degradation law of a single external parameter of the power MOSFETs, but ignore the relationship between the degradation of multi-parameter of the power MOSFETs and the physical nature behind the parameter degradation. The reliability assessment results based on the single parameter degradation model have a large deviation from the actual situation. This paper proposes a multi-parameter degradation modeling method for power MOSFETs that integrates semiconductor physics and multidimensional degradation data. The physical properties of power MOSFETs are analyzed by combining semiconductor physics principles with test data. This approach allows for the extraction of degradation information related to multiple parameters of power MOSFETs using the PSO optimization algorithm. Subsequently, a multi-parameter degradation model of power MOSFETs is established. The method proposed in this article considers the physical nature of the multi-parameter degradation process of power MOSFET, and obtains the multi-parameter degradation information of power MOSFET through the multi-dimensional degradation data of power MOSFET and the PSO optimization algorithm, so as to perform degradation modeling. The established degradation model describes the overall degradation trend of the power MOSFET through the degradation laws of multiple parameters. This research contributes to reliability assessment and maintenance planning of power MOSFETs from the perspective of actual physical information.