48V-to-0.9V Voltage Regulator with GaN Devices and Integrated Magnetic Design

In recent years, the development of artificial intelligence (AI) has been increasingly rapid, posing a huge challenge to the power supply of data centers. Enhancing key performance metrics such as energy conversion efficiency, power density and control bandwidth constitutes pivotal research directions for next-generation voltage regulator modules (VRMs). GaN devices have smaller sizes and higher power densities, making it possible to create more compact power electronics systems. A GaN-based, low-voltage and high-current converter of a multi-phase interleaved current-doubler rectifier is proposed in this article, with an input voltage of 48 V, an output voltage of 0.9 V, and an output current of 120 A. By integrating magnetic design, the power density of the module is enhanced. The structure of the traditional dual-EI magnetic core is optimized to integrate transformers and output inductors. A comprehensive time-domain analysis method combining magnetic and electrical circuits is employed to conduct small-signal modeling of the converter. The final prototype has a current density of 0.2A/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a peak efficiency of 89%.

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Published
2025-08-15
DOI
https://doi.org/10.1109/wipda-asia63772.2025.11183885
Primary Topic
Multilevel Inverters and Converters
Type
article
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article

48V-to-0.9V Voltage Regulator with GaN Devices and Integrated Magnetic Design

J. S. Tan, Zikang Li, Dianguo Xu, Yijie Wang
Multilevel Inverters and Converters
article

48V-to-0.9V Voltage Regulator with GaN Devices and Integrated Magnetic Design

J. S. Tan, Zikang Li, Dianguo Xu, Yijie Wang
article en

Abstract

In recent years, the development of artificial intelligence (AI) has been increasingly rapid, posing a huge challenge to the power supply of data centers. Enhancing key performance metrics such as energy conversion efficiency, power density and control bandwidth constitutes pivotal research directions for next-generation voltage regulator modules (VRMs). GaN devices have smaller sizes and higher power densities, making it possible to create more compact power electronics systems. A GaN-based, low-voltage and high-current converter of a multi-phase interleaved current-doubler rectifier is proposed in this article, with an input voltage of 48 V, an output voltage of 0.9 V, and an output current of 120 A. By integrating magnetic design, the power density of the module is enhanced. The structure of the traditional dual-EI magnetic core is optimized to integrate transformers and output inductors. A comprehensive time-domain analysis method combining magnetic and electrical circuits is employed to conduct small-signal modeling of the converter. The final prototype has a current density of 0.2A/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a peak efficiency of 89%.

Harbin Institute of Technology (CN)
Openalex Percentile: Top 73%
Multilevel Inverters and Converters
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48V-to-0.9V Voltage Regulator with GaN Devices and Integrated Magnetic Design — J. S. Tan, Zikang Li, et al. · (2025) | TGRS Research Map | TGRS