A 3×1 Silicon Carbide Bidirectional Switch Power Module with Balanced Inductance During Current Commutation

Bidirectional switch is an inevitable device in many topologies, such as current-source converter and matrix converter. The performance of these converters are however deeply affected by the current commutation process, which requires balanced inductance, especially for the fast-switched silicon carbide converters. To address this issue, this paper proposes an optimized 3×1 silicon carbide bidirectional switch power module. This paper firstly analyzes the commutation loop and parasitic inductance rules of the power module. Based on this, the circuit topology and geometric packaging structure of the bidirectional switch module are presented, which is designed with the standard substrate size of EasyPACK 1B. By adopting a symmetric layout for the module, a 3×1-phase silicon carbide-based bidirectional switch power module with balanced inductance during current commutation is developed. The effectiveness of the proposed method has been verified by the double-pulse test.