Reliability Analysis and Implementation of Silver Sintering Connection in SiC High-temperature Package

This paper focuses on the nano-silver sintering technology in Silicon Carbide (SiC) high-temperature packaging. It comprehensively investigates and analyses the failure modes and high-temperature ageing characteristics of sintered nano-silver from both macro and microscopic perspectives. In addition, this work realizes the package of SiC high-temperature power devices based on the sintered nano-silver interconnection technology, and validates the high-temperature operation capability of the SiC device under the junction temperature up to 488°C.