Investigation on SiO₂ Gate Formed through Ultrahigh-Temperature NO Oxidation

A novel thermal oxidation process combined nitric-oxide and high temperature is reported to improve the SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate quality for 4H-silicon carbide metal-oxide-semiconductor field effect transistors. The structure and electrical properties of the SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> films formed by the method were studied in detail. The results showed that ultrahigh temperature nitric-oxide oxidation method can achieve high-quality SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate. The 4H-silicon carbide metal-oxide-semiconductor field effect transistors with the SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate formed through this method can work properly which proves that the method is compatible with existing SiC manufacturing processes.