Common-mode Noise Analysis of Hall-Effect Sensor for SiC Power Converter

The fast switching capability of SiC-MOSFET devices enables significant improvements in power density for power electronic converters. However, this technological advantage introduces substantial challenges in electromagnetic compatibility due to high dv/dt-induced noise effects, particularly impacting the accuracy of sensor sampling circuits. This paper systematically investigates the cross-domain electromagnetic coupling phenomena between power circuits and measurement systems in closed-loop hall effect sensor sampling configurations. Through comprehensive characterization of parasitic capacitance parameters in typical hall effect sensor primary-secondary structures, we reveal the multi-path conduction mechanisms by which power circuit dv/dt transients propagate as common-mode interference to sensitive sampling circuits. The study establishes a detailed equivalent circuit model elucidating the common-mode interference transmission path, supported by rigorous analysis of the parasitic capacitance coupling effects between high-voltage power components and low-voltage measurement circuits. These findings provide critical insights for developing effective electromagnetic interference suppression strategies in high-switching-speed power electronic systems.