A Novel Approach to Estimate the Thermal Destruction Point of SiC MOSFETs under Short Circuit Conditions

Short circuit events in silicon carbide (SiC) MOSFETs can create critical reliability issues because of rapid temperature rise, which frequently results in thermal failure of the device. This paper discusses a new approach for the estimation of thermal destruction point during short circuit conditions by integrating experimentally measured power dissipation data into thermal models created in simulation software. The proposed methodology enables an accurate prediction of the thermal destruction limits, giving more insight about the device operation in highly stressful environments. The works also focus on the impact and changes in destruction temperature while varying different electrical parameters.