A Voltage-Sharing Cascode Switch Structure Using SiC JFET and GaN HEMT

To maintain the advantages of high efficiency and high switching speed of the Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor devices, this paper introduces a voltage-sharing cascode structure. The proposed structure has the capability of a higher voltage rating and simpler gate driver design compared to a series connection of devices with synchronization issues. The simulation results show a fast dv/dt at transient, enabling the implementation of high switching frequency converters. The experimental results verify the applicability of the proposed structure and validate its fast-switching speed.