A Symmetrical Double-Sided Cooled SiC Power Module for Multi-Parallel Applications

To address dynamic current sharing and thermal dissipation bottlenecks in multi-parallel silicon carbide (SiC) power module systems, this paper proposes a symmetrically arranged double-sided cooling (DSC) power module. The design employs dual direct bonded copper (DBC) substrate stacking and coplanar power terminal configuration, achieving 5.48 nH loop parasitic inductance through mutual inductance cancellation effects. Combined with 44.4° truncated pyramidal heat dissipation structure optimization using metallic spacers, simulations demonstrate 8.7°C reduction in maximum chip temperature and 60% thermal gradient mitigation. A 52mm×30mm×5.5mm half-bridge module was developed via triple reflow soldering and silicone gel encapsulation. Experimental results show 6A dynamic current peak deviation in six-module parallel operation under 800V/1000A conditions, with three-module static current imbalance of 9.6%, validating excellent electrical performance.