Design and Characterization of A Novel Embedded SiC Power Module with Double-Sided RDL

Existing packaging technologies struggle to meet the demands of high-frequency and high-temperature applications for SiC devices, making embedded packaging a promising solution. This study designs a novel double-sided RDL embedded package structure and proposes a new "Molding-Drilling-Rdl" process route, which not only reduces the process complexity and cost of embedded packaging but also improves package performance. By employing a double-sided direct plating RDL method, the solder required for connecting the back of the die to the copper layer in traditional embedded packages is eliminated. This not only reduces the junction-to-case thermal resistance but also avoids potential reliability issues associated with the solder layer after long-term operation. Thermal simulation results show that the junction-to-case thermal resistance of the proposed package structure is reduced by at least 68% compared to the traditional lead frame-based embedded package. Furthermore, by utilizing a compact layout and copper pad design, this paper reduces the total parasitic inductance of the module to 0.41 nH, an 81% reduction compared to the traditional embedded package with through-vias. Double-Pulse testing results demonstrate that the proposed solution reduces switching losses by 13% compared to a commercial TO-247 package.