A Numerical Model of SiC MOSFET for Electro-Thermal Characteristics Based on TCAD

SiC semiconductor devices are replacing Si-Based semiconductor devices due to their bandwidth, high breakdown field strength, and high thermal conductivity. Due to the differences in the physical and geometrical structures of Si and SiC power devices, it is more difficult to accurately characterize the dynamic and static properties of SiC devices than those of conventional Si devices. In this paper, a metameric simulation model is constructed through the TCAD simulation platform to accurately characterize the spatial and temporal evolution of multi-physical fields and semiconductor physical processes inside SiC MOSFETs, which can be used to guide the practical application of SiC MOSFETs. The simulation results of the characteristic curves of the device at different temperatures are in good agreement with the manual. The switching experiments, avalanche breakdown experiments and gate breakdown experiments at different temperatures are designed, and the errors between the simulation results and the experimental results are within the acceptable range, which verifies the accuracy of the model.