Study on Al<sub>x</sub>Ga<sub>1-x</sub>N Graded Composite Barrier GaN HEMT
This work designs an Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>N graded composite barrier GaN HEMT (GB-HEMT) and compares it with a fixed component barrier GaN HEMT (FB-HEMT). Through simulation with Silvaco TCAD, it is found that the GBHEMT has wider electron gas and flatter transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf>). Its saturation output current reaches 1.73 A/mm and the turnoff characteristics is also greatly improved. In addition, due to the exceptional direct current (DC) performance, the radio frequency (RF) performance of GB-HEMT is also excellent. In terms of small-signal characteristics, the f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf>/f<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of GB-HEMT are 138.4/271.6 GHz. For large-signal characteristics, its power added efficiency (PAE) and gain are 18.7 dB and 44.4%, respectively, with the power density of 3.8 W/mm.
Authors
- Fayu Wan (ORCID: https://orcid.org/0000-0002-5626-6065)
- Ruihao Zhang
Institutions
- Nanjing University of Information Science and Technology (CN)
Publication Details
- Published
- 2025-08-15
- DOI
- https://doi.org/10.1109/wipda-asia63772.2025.11183919
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00