A High-Performance Double-Sided Cooling SiC Power Module Packaging Design for EV Inverters

Wide bandgap (WBG) devices, particularly SiC devices, are increasingly being applied in electric vehicle (EV) inverters due to their excellent performance. To fully leverage the advantages of WBG devices, specialized packaging designs are required. Currently, the trend in packaging for WBG devices is aimed at reducing parasitic inductance, achieving higher heat dissipation capabilities, and enhancing reliability. In this work, a high-performance double-sided cooling (DSC) package using SiC MOSFETs suitable for EV inverters is studied. A novel 1200 V/600 A half-bridge module with 10 SiC MOSFETs in parallel is proposed. The module has a compact layout with external dimensions of only 50 mm x 50 mm x 4.3 mm. The electromagnetic behavior of the module is analyzed using the finite element method (FEM) in ANSYS Q3D, and the parasitic inductance of each component is extracted. The simulation results of the proposed design indicate that the total parasitic inductance is only 50% of that of commercial devices at the same rated power level. Thermal simulation analysis is conducted in ANSYS to verify the low thermal resistance of the designed module. A module prototype is fabricated with Cu sintering technology at its core, and the high reliability of the interconnections is verified.