Heavily doped N-polar GaN with a mirror-like surface achieved <i>via</i> Ge doping
We have achieved n++ N-polar GaN using germane, without causing degradation of the surface morphology. This study systematically compares the Ge doping behaviors of Ga-polar, nonpolar, and N-polar GaN.
Authors
- Zhen Deng (ORCID: https://orcid.org/0000-0002-8591-173X)
- Chunhua Du (ORCID: https://orcid.org/0000-0002-6889-4317)
- Yongkang Liu (ORCID: https://orcid.org/0009-0007-3452-4872)
- Yuanhao Huang
- Yang Jiang (ORCID: https://orcid.org/0000-0002-5364-1421)
- Hong Chen (ORCID: https://orcid.org/0000-0003-4963-7515)
- Wenxin Wang (ORCID: https://orcid.org/0000-0001-8191-3976)
- Haiqiang Jia (ORCID: https://orcid.org/0000-0003-1919-9403)
Institutions
- Chinese Academy of Sciences (CN)
- Songshan Lake Materials Laboratory (CN)
- Institute of Physics (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00579e
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China