The second-order nonlinear optical properties of <i>κ</i>-phase gallium oxide

In this study, we present the first characterization of the effective second-order nonlinear optical susceptibility χeff(2) and the second-order susceptibility tensor element d31 of κ-phase gallium oxide (κ-Ga2O3) using a second harmonic generation (SHG) technique. At the wavelength of 850 nm, we measured a χeff(2) value of 0.1068 pm/V and a d31 value of 0.0566 pm/V. In addition, we investigated the wavelength and polarization dependence of χeff(2). These findings could be a constructive step toward expanding the potential applications of Ga2O3 as a novel optical material platform, complementing its emerging role as a competitive next-generation material for electronics.

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Publication Details

Journal
APL Materials
Published
2025-10-01
DOI
https://doi.org/10.1063/5.0268375
Citations
2
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.85
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article

The second-order nonlinear optical properties of κ-phase gallium oxide

Ziyi He, Yuji Zhao, Pulickel M. Ajayan, Mingfei Xu et al.
2 citations
APL Materials
Ga2O3 and related materials
0.85
article

The second-order nonlinear optical properties of κ-phase gallium oxide

Ziyi He, Yuji Zhao, Pulickel M. Ajayan, Mingfei Xu, Kai Fu, Rui Xu, Hanyu Zhu, Xiang Zhang, Tao Li, Xuan Zhao, Jingan Zhou, Jacob T. Robinson, Xiaodong Zhang, Cheng Chang, Giovanni Cerqueira
article en
2 citations

Abstract

In this study, we present the first characterization of the effective second-order nonlinear optical susceptibility χeff(2) and the second-order susceptibility tensor element d31 of κ-phase gallium oxide (κ-Ga2O3) using a second harmonic generation (SHG) technique. At the wavelength of 850 nm, we measured a χeff(2) value of 0.1068 pm/V and a d31 value of 0.0566 pm/V. In addition, we investigated the wavelength and polarization dependence of χeff(2). These findings could be a constructive step toward expanding the potential applications of Ga2O3 as a novel optical material platform, complementing its emerging role as a competitive next-generation material for electronics.

APL MaterialsVol. 13(10)
University of Utah (US), Suzhou Institute of Nano-tech and Nano-bionics (CN), Arizona State University (US), Rice University (US)
Openalex Percentile: Top 25%
Ga2O3 and related materials
0.85
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