The Effect of Different Temperatures on the Properties of Cadmium Selenide Films Prepared by Low-Cost Method

In this study, cadmium selenide (CdSe) thin films were grown on glass substrates by a low-cost method (chemical spry pyrolysis (CSP). Different temperatures (350,300,250 ºC) were used to prepare CdSe thin films. X-RD, energy band gap (Eg) and (SEM ) scanning electron microscopy were used to study the effect of change in temperature on the films. X-RD analysis revealed that the minor shifting in diffraction angle, intensity, and full-width half-maximum caused variation in crystallite size. The relation between crystallite size and the temperature was directly proportional and found to be (43.2,41.7 and 38.8 nm) at temperatures (350,300 and 250 ˚C), respectively, with dislocation density and microstrain inversely proportional with depositing temperature. Increasing the temperature also affects the energy band gap, and the change was inversely between them(2.06, 1.97 and 1.95 eV). SEM results showed the effect of the prepared factor (temperature) on the surface morphology and best homogeneity in shape and size for samples prepared at temperatures (300 ˚C) .

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Publication Details

Journal
Samarra Journal of Pure and Applied Science
Published
2025-03-30
DOI
https://doi.org/10.54153/sjpas.2025.v7i1.1053
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

The Effect of Different Temperatures on the Properties of Cadmium Selenide Films Prepared by Low-Cost Method

Abbas Kasoob Jarallah
Samarra Journal of Pure and Applied Science
Chalcogenide Semiconductor Thin Films
article

The Effect of Different Temperatures on the Properties of Cadmium Selenide Films Prepared by Low-Cost Method

Abbas Kasoob Jarallah
article en

Abstract

In this study, cadmium selenide (CdSe) thin films were grown on glass substrates by a low-cost method (chemical spry pyrolysis (CSP). Different temperatures (350,300,250 ºC) were used to prepare CdSe thin films. X-RD, energy band gap (Eg) and (SEM ) scanning electron microscopy were used to study the effect of change in temperature on the films. X-RD analysis revealed that the minor shifting in diffraction angle, intensity, and full-width half-maximum caused variation in crystallite size. The relation between crystallite size and the temperature was directly proportional and found to be (43.2,41.7 and 38.8 nm) at temperatures (350,300 and 250 ˚C), respectively, with dislocation density and microstrain inversely proportional with depositing temperature. Increasing the temperature also affects the energy band gap, and the change was inversely between them(2.06, 1.97 and 1.95 eV). SEM results showed the effect of the prepared factor (temperature) on the surface morphology and best homogeneity in shape and size for samples prepared at temperatures (300 ˚C) .

Samarra Journal of Pure and Applied ScienceVol. 7(1)
University of Tikrit (IQ)
Openalex Percentile: Top 73%
Chalcogenide Semiconductor Thin Films
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