Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors
Salahuddin Attar, Sara Ahmad J. A. Al-Hail, Maciej Barłóg, Hassan S. Bazzi et al.
Journal
Materials Advances
Topics
Organic and Molecular Conductors Research
article
Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors
Salahuddin Attar, Sara Ahmad J. A. Al-Hail, Maciej Barłóg, Hassan S. Bazzi, Lei Fang, Myung‐Han Yoon, Mohammed K. Al-Hashimi, Dušan Sredojević, Alexander J. Kalin, Ji Hwan Kim
article en
Abstract
No abstract available for this paper.
Publication Tag
Materials AdvancesVol. 6(21)
Institutions
Gwangju Institute of Science and Technology (KR), University of Belgrade (RS), Hamad bin Khalifa University (QA), Texas A&M University at Qatar (QA), Texas A&M University (US)
Funders
Fonds National de la Recherche Luxembourg, Qatar National Research Fund
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Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors — Salahuddin Attar, Sara Ahmad J. A. Al-Hail, et al. · Materials Advances (2025) | TGRS Research Map | TGRS