Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors

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Journal
Materials Advances
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ma00573f
Primary Topic
Organic and Molecular Conductors Research
Type
article
Field-Weighted Citation Impact
0.00

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article

Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors

Salahuddin Attar, Sara Ahmad J. A. Al-Hail, Maciej Barłóg, Hassan S. Bazzi et al.
Materials Advances
Organic and Molecular Conductors Research
article

Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors

Salahuddin Attar, Sara Ahmad J. A. Al-Hail, Maciej Barłóg, Hassan S. Bazzi, Lei Fang, Myung‐Han Yoon, Mohammed K. Al-Hashimi, Dušan Sredojević, Alexander J. Kalin, Ji Hwan Kim
article en

Abstract

No abstract available for this paper.
Materials AdvancesVol. 6(21)
Gwangju Institute of Science and Technology (KR), University of Belgrade (RS), Hamad bin Khalifa University (QA), Texas A&M University at Qatar (QA), Texas A&M University (US)
Fonds National de la Recherche Luxembourg, Qatar National Research Fund
Openalex Percentile: Top 81%
Organic and Molecular Conductors Research
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Leveraging TIPS-assisted one-pot di-bromination for thiazole-flanked NDI and PDI conjugated n-type semiconductors — Salahuddin Attar, Sara Ahmad J. A. Al-Hail, et al. · Materials Advances (2025) | TGRS Research Map | TGRS