Changes in the intrinsic stimulated intense picosecond emission of the Al<sub>x</sub>Ga<sub>1–x</sub>As-GaAs-Al<sub>x</sub>Ga<sub>1–x</sub&gt

Quenching of the generation of the intrinsic stimulated intense picosecond emission of the AlxGa1–xAs-GaAs-AlxGa1–xAs heterostructure, emerging from its end, has been detected. Quenching occurs when those part of the emission reflected from the end of the heterostructure returns to the active region. This new effect allows decreasing the emission duration by up to 7.5 times.