Trapping Dynamics and Endurance in HfO 2 -FeFETs: An Insight From Charge Pumping
Gautham Kumar, Yannick Raffel, Bhaswar Chakrabarti, Agniva Paul et al.
Citations
2 citations
Journal
IEEE Electron Device Letters
Topics
Ferroelectric and Negative Capacitance Devices
Field-Weighted Citation Impact (FWCI)
1.46
article
Trapping Dynamics and Endurance in HfO 2 -FeFETs: An Insight From Charge Pumping
Gautham Kumar, Yannick Raffel, Bhaswar Chakrabarti, Agniva Paul, Sourav De, Konrad Seidel, Asim Senapati, Apu Das, Sk Masud Rana, C. C. Cheng, Padovani Andrea, Lederer Maximilian
article en
2 citations
Abstract
No abstract available for this paper.
Publication Tag
IEEE Electron Device LettersVol. 46(11)
Institutions
University of Modena and Reggio Emilia (IT), Indian Institute of Technology Madras (IN), National Tsing Hua University (TW), Fraunhofer Institute for Photonic Microsystems (DE), Powerchip (Taiwan) (TW)