Trapping Dynamics and Endurance in HfO <sub>2</sub> -FeFETs: An Insight From Charge Pumping

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-09-19
DOI
https://doi.org/10.1109/led.2025.3612323
Citations
2
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
1.46
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article

Trapping Dynamics and Endurance in HfO 2 -FeFETs: An Insight From Charge Pumping

Gautham Kumar, Yannick Raffel, Bhaswar Chakrabarti, Agniva Paul et al.
2 citations
IEEE Electron Device Letters
Ferroelectric and Negative Capacitance Devices
1.46
article

Trapping Dynamics and Endurance in HfO 2 -FeFETs: An Insight From Charge Pumping

Gautham Kumar, Yannick Raffel, Bhaswar Chakrabarti, Agniva Paul, Sourav De, Konrad Seidel, Asim Senapati, Apu Das, Sk Masud Rana, C. C. Cheng, Padovani Andrea, Lederer Maximilian
article en
2 citations

Abstract

No abstract available for this paper.
IEEE Electron Device LettersVol. 46(11)
University of Modena and Reggio Emilia (IT), Indian Institute of Technology Madras (IN), National Tsing Hua University (TW), Fraunhofer Institute for Photonic Microsystems (DE), Powerchip (Taiwan) (TW)
Openalex Percentile: Top 15%
Ferroelectric and Negative Capacitance Devices
1.46
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