Edge‐Passivated Monolayer WSe<sub>2</sub> Nanoribbon Transistors (Adv. Mater. 39/2024)
Edge-Passivated 2D Nanoribbon Transistors In article number 2313694, Sihan Chen, Rashid Bashir, Arend M. van der Zande, and co-workers report a facile edge passivation method for p-type monolayer WSe2 nanoribbon transistors. The edge-passivated nanoribbons demonstrate improved hole mobility and hole doping compared to their microribbon counterparts.
Authors
- Arend M. van der Zande (ORCID: https://orcid.org/0000-0001-5104-9646)
- Rashid Bashir (ORCID: https://orcid.org/0000-0002-7225-9180)
- William P. King (ORCID: https://orcid.org/0000-0001-8606-1290)
- Sihan Chen (ORCID: https://orcid.org/0000-0003-1216-6422)
- Yue Zhang (ORCID: https://orcid.org/0000-0002-3087-6965)
Institutions
- University of Illinois Urbana-Champaign (US)
Publication Details
- Journal
- Advanced Materials
- Published
- 2024-09-01
- DOI
- https://doi.org/10.1002/adma.202470315
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00