Self-power and high gain photodetection of a type-II MAPbBr <sub>3</sub> single-crystal film/CdSeS quantum dot heterojunction photodetector
Ultrathin MAPbBr 3 single-crystal film and alloyed CdSeS QDs form a type-II heterojunction that establishes a built-in electric field, enabling stable high-gain photodetection with an ultralow dark current of 10 −11 A, an on/off ratio of 184 313.
Authors
- Jianxu Ding (ORCID: https://orcid.org/0000-0001-5662-2683)
- Ziyang Jiang
- Haiqing Sun (ORCID: https://orcid.org/0000-0001-5390-2612)
- Xiangyu Huo
- He Zhang (ORCID: https://orcid.org/0000-0003-0371-9507)
- Rui Liu (ORCID: https://orcid.org/0000-0001-6985-9129)
- Xinying Liu (ORCID: https://orcid.org/0000-0002-1629-0298)
- Xueying Cui
- Huiling Zhu (ORCID: https://orcid.org/0000-0002-0087-1477)
- Weiwei Zhang (ORCID: https://orcid.org/0000-0002-7274-803X)
Institutions
- Shandong University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc03203b
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00