First Experimental Demonstration of Spiral Resistive Field Plate Termination With Strong Process Robustness for 700 V Silicon Super Junction MOSFET

In this letter, a novel spiral resistive field plate (SRFP) termination structure with strong process robustness for 700 V silicon super junction (SJ) MOSFET is proposed, simulated, and experimentally demonstrated for the first time. By electric field modulation of the introduced additional SRFP charge field, the electric field distributions and the charge imbalance in the termination region are improved. The simulated dose window of the P-type lateral connection (PLC) layer is enlarged from 9.5% to 46.2% with breakdown voltage (BV) exceeding 700 V. Benefiting from the high tolerance of the PLC layer dose (D<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">plc</sub>), the process window of the dose of P-pillar (D<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P-pillar</sub>) is also enhanced at the D<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">plc</sub> deviation from charge balance conditions in simulation. Meanwhile, the experimental device realizes a wider D<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P-pillar</sub> window increased from 1.8% to above 3.3%. The proposed structure effectively tackles the fragile charge balance by SRFP at surface, thereby improving the reliability and stability of the device.