65 keV Si Ion Beam Implantation on the Structural and Optical Properties in Iron Oxide Films

The effects of 65 keV Si ion beam implantation on hematite ( α ‐Fe 2 O 3 ) film are reported. Grazing incidence X‐ray diffraction (GI‐XRD) patterns confirm a higher degree of displacement of atoms at the film surface and stimulated disordered lattice structure. The film implanted with higher Si fluence (1 × 10 −16 ions cm −2 ) shows a higher degree of surface amorphization compared to the film implanted with lower Si fluence (1 × 10 −15 ions cm −2 ). The results of GI‐XRD and Raman spectra indicate the oxidization of implanted Si ions to form SiO 2 at the surface structure. The analysis of Rutherford backscattering (RBS) spectra suggests that the implanted Si ions penetrated deep from the surface and deposited inside the films. The RBS spectra indicate the formation of nonstoichiometric oxides of (Fe/Si)O at the interface of the film and the substrate. The optical absorbance spectra show fluence‐independent nature in the UV region, whereas the absorbance varies with fluence in the visible region. The presence of multiple bandgaps (2.41–2.43 and 4.69–4.77 eV) indicates multiple layers/interfaces within the films. In turn, varied refractive indices (1.95–2.57) indicate the material's potential in optoelectronic devices and optical filters.