Ultrasensitive Photonic Synapse with Broadband Response Based on the PdSe<sub>2</sub> QDs/GeSe Thin Film

Photonic synapses that integrate optical sensing with synaptic functionalities are becoming increasingly important in the advancement of neuromorphic computing systems. However, achieving broad-band sensing and preprocessing capabilities under weak light illumination remains a significant challenge. Herein, we report a photonic synapse based on the PdSe<sub>2</sub> QDs/GeSe thin film which leverages the high photosensitivity and favorable band alignment of the PdSe<sub>2</sub> QDs/GeSe heterojunction to emulate essential synaptic functionalities. It also exhibits a broadband photoresponse ranging from ultraviolet (UV, 365 nm) to near-infrared (NIR, 850 nm) and maintains performance under an ultraweak light detection threshold down to 0.15 μW cm<sup>-2</sup>. Furthermore, its potential applications for optical information processing and facial recognition are demonstrated. This work provides a promising strategy for developing multifunctional photonic synapses based on the PdSe<sub>2</sub> QDs/GeSe thin film.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2025-10-03
DOI
https://doi.org/10.1021/acs.jpclett.5c02552
Citations
1
Primary Topic
Nonlinear Optical Materials Studies
Type
article
Field-Weighted Citation Impact
0.67
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Ultrasensitive Photonic Synapse with Broadband Response Based on the PdSe2 QDs/GeSe Thin Film

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Ultrasensitive Photonic Synapse with Broadband Response Based on the PdSe2 QDs/GeSe Thin Film

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article en
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Abstract

Photonic synapses that integrate optical sensing with synaptic functionalities are becoming increasingly important in the advancement of neuromorphic computing systems. However, achieving broad-band sensing and preprocessing capabilities under weak light illumination remains a significant challenge. Herein, we report a photonic synapse based on the PdSe<sub>2</sub> QDs/GeSe thin film which leverages the high photosensitivity and favorable band alignment of the PdSe<sub>2</sub> QDs/GeSe heterojunction to emulate essential synaptic functionalities. It also exhibits a broadband photoresponse ranging from ultraviolet (UV, 365 nm) to near-infrared (NIR, 850 nm) and maintains performance under an ultraweak light detection threshold down to 0.15 μW cm<sup>-2</sup>. Furthermore, its potential applications for optical information processing and facial recognition are demonstrated. This work provides a promising strategy for developing multifunctional photonic synapses based on the PdSe<sub>2</sub> QDs/GeSe thin film.

The Journal of Physical Chemistry LettersVol. 16(41)
Ministry of Education of the People's Republic of China (CN), Nanjing Normal University (CN), Beijing Jiaotong University (CN), Suzhou University of Science and Technology (CN), Southeast University (CN), Immersion (United States) (US)
Openalex Percentile: Top 26%
Nonlinear Optical Materials Studies
0.67
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