An Analytical Model for GaN HEMTs by Using Gaussian Function

An analytical model for GaN HEMTs using Gaussian Function is presented in this paper. The expression proposed is simple and can be differentiated into any higher order. Compared with the Curtice-type and Angelov-type models, the proposed model has the characteristics of high accuracy and fast modeling speed. Taking the modeling results of Ids1 as an example, the accuracy of the proposed analytical model is 1.5 times and 9.2 times higher than the results of the Modified-Curtice and Modified-Angelov model, respectively, while the corresponding modeling time is shortened by 2.3 times. The small- and large- signal validation illustrates the effectiveness of the model.