Heterogenous Integration of Boron-Doped <i>p</i> -Diamond with Monolayer <i>n</i> -MoS ₂ for <i>P</i> <i>N</i> Junctions Operating at Room Temperature

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature <i>n</i>-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating <i>n</i>-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS₂) with boron doped <i>p</i>-type single crystal diamond and demonstrate 2D/3D heterostructure-based <i>PN</i> junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (<i>J</i>_D) of ∼4000 A/cm², an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10⁶. We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. Our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.