Enhanced Performance and Reliability of Non-Uniform Channel Double-Gate Tunnel Field Effect Transistor with InGaSb Pocket Modulation

This study investigates the temperature-dependent behavior of the step-channel dual-metal double-gate tunnel field-effect transistor (SCP-DG-TFET) incorporating an InGaSb pocket, within the range of 250 to 450 K, highlighting its thermal reliability and operational robustness. The InGaSb pocket, characterized by a low bandgap and minimal lattice mismatch with GaSb, significantly enhances carrier injection efficiency and strengthens electrostatic control within the device. The SCP-DG-TFET exhibits remarkable switching characteristics, achieving a high Ion/Ioff ratio of 2.65 × 1013, alongside an improved subthreshold swing (SS) of 25.94 mV/dec, indicating efficient suppression of leakage currents. The device achieves a transconductance (gm) of 4.98 mS, which aids in maintaining a stable threshold voltage (Vth) of 0.384 V. Furthermore, it delivers an ON-state current (Ion) of 1.10 mA/µm and an OFF-state leakage current (Ioff) of 5.83 × 10−17 A/µm. These findings highlight the device’s capability for efficient switching, making it a promising candidate for future low-power and high-frequency electronic applications.