Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications

Two types of cadmium selenide telluride (CdSeTe) photovoltaic devices have been exposed to high-energy (150–1500 keV) protons with fluences ranging from 1 × 1011 to 9 × 1013 cm−2. Pre- and post-irradiation current density vs voltage characteristic data were collected and analyzed. Arsenic-doped CdSeTe devices retained 80% of the power conversion efficiency (PCE) relative to control devices after exposure to 1012 cm−2 650 keV protons, while copper-doped CdSeTe devices retained about 95% of the control PCE under the same irradiation condition. Displacement damage dose analysis coupled with simulations for duration-dependent performance in a medium Earth orbit space mission revealed superior PCE remaining factors, indicating greater resilience to proton bombardment than state-of-the-art multijunction III-V based space photovoltaic technologies.

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Publication Details

Journal
APL Energy
Published
2025-10-03
DOI
https://doi.org/10.1063/5.0282712
Citations
1
Primary Topic
solar cell performance optimization
Type
article
Field-Weighted Citation Impact
0.73
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article

Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications

Michael J. Heben, Zachary W. Zawisza, Molly Smith, Adam B. Phillips et al.
1 citations
APL Energy
solar cell performance optimization
0.73
article

Proton radiation resilience of CdSeTe photovoltaics: High predicted end-of-life performance for space applications

Michael J. Heben, Zachary W. Zawisza, Molly Smith, Adam B. Phillips, Scott Lambright, Sabin Neupane, Zhaoning Song, Abasi Abudulimu, Samuel Erickson, Randy J. Ellingson, Aesha P. Patel, R. E. Irving, James Becker, Tamara Isaacs‐Smith, R. M. Snuggs, Ebin Bastola, Yanfa Yan, Po‐Yu Chen
article en
1 citations

Abstract

Two types of cadmium selenide telluride (CdSeTe) photovoltaic devices have been exposed to high-energy (150–1500 keV) protons with fluences ranging from 1 × 1011 to 9 × 1013 cm−2. Pre- and post-irradiation current density vs voltage characteristic data were collected and analyzed. Arsenic-doped CdSeTe devices retained 80% of the power conversion efficiency (PCE) relative to control devices after exposure to 1012 cm−2 650 keV protons, while copper-doped CdSeTe devices retained about 95% of the control PCE under the same irradiation condition. Displacement damage dose analysis coupled with simulations for duration-dependent performance in a medium Earth orbit space mission revealed superior PCE remaining factors, indicating greater resilience to proton bombardment than state-of-the-art multijunction III-V based space photovoltaic technologies.

APL EnergyVol. 3(4)
National Laboratory of the Rockies (US), First Solar (United States) (US), Auburn University (US), University of Toledo (US)
Openalex Percentile: Top 23%
solar cell performance optimization
0.73
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