Two-dimensional halide perovskite memristors for resistive switching memory systems

Two-dimensional (2D) halide perovskites have emerged as a versatile platform for energy-efficient resistive switching memories.

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Publication Details

Journal
Materials Advances
Published
2025-10-03
DOI
https://doi.org/10.1039/d5ma00686d
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.00

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article

Two-dimensional halide perovskite memristors for resistive switching memory systems

Hyojung Kim
Materials Advances
Advanced Memory and Neural Computing
article

Two-dimensional halide perovskite memristors for resistive switching memory systems

Hyojung Kim
article en

Abstract

Two-dimensional (2D) halide perovskites have emerged as a versatile platform for energy-efficient resistive switching memories.

Materials AdvancesVol. 7(4)
Sejong University (KR)
National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 73%
Advanced Memory and Neural Computing
DOIOpen Access PDFOpenAlex
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Two-dimensional halide perovskite memristors for resistive switching memory systems — Hyojung Kim · Materials Advances (2025) | TGRS Research Map | TGRS