An Area-Efficient Readout Circuit for a High-SNR Triple-Gain LOFIC CMOS Image Sensor
A lateral overflow integration capacitor (LOFIC) CMOS image sensor (CIS) can achieve high-dynamic-range (HDR) imaging by combining a low-conversion-gain (LCG) signal with a high-conversion-gain (HCG) signal. However, the signal-to-noise ratio (SNR) drops at the switching point from HCG signal to LCG signal due to the significant pixel noise in the LCG signal. To address this issue, a triple-gain LOFIC CIS with a middle-conversion-gain (MCG) signal has been introduced. In this work, we propose an area-efficient readout circuit for the triple-gain LOFIC CIS, using amplifier and capacitor sharing techniques to process the HCG, MCG, and LCG signals. A test chip of the proposed readout circuit was fabricated using the 0.18μm CMOS process. The area overhead was only 7.6%, and the SNR drop was improved by 8.05 dB compared to the readout circuit for a dual-gain LOFIC CIS.
Authors
- Ai Otani (ORCID: https://orcid.org/0009-0006-0687-3381)
- Isao Takayanagi (ORCID: https://orcid.org/0000-0003-3016-3348)
- Yuki Morikawa
- Hideki Owada
- K. Miyauchi (ORCID: https://orcid.org/0000-0002-2732-7957)
- Hiroaki Ogawa
- Shunsuke Okura (ORCID: https://orcid.org/0000-0001-6422-3703)
Institutions
- Ritsumeikan University (JP)
- Omron (Japan) (JP)
Publication Details
- Journal
- Sensors
- Published
- 2025-10-02
- DOI
- https://doi.org/10.3390/s25196093
- Primary Topic
- CCD and CMOS Imaging Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.00