Dislocation behavior near the seeding interface in <110>-oriented Czochralski-Si single crystals

Abstract The behavior of dislocations due to thermal shock and lattice misfit in 〈110〉-oriented Czochralski (CZ) Si crystals, in which the {111} slip plane is parallel to the growth direction, is investigated. The B concentration in the seed and grown crystal was varied from undoped to 3 × 10 19 atoms cm −3 , and the cross-sections of the grown crystals were examined by X-ray topography. Increasing the B concentration in the seed reduced the density of dislocations due to thermal shock. These were completely suppressed at a B concentration of 1.5 × 10 19 atoms cm −3 in the seed crystal. Furthermore, by matching the B concentration in the grown crystal to that in the seed, dislocations due to lattice misfit could also be effectively suppressed. Consequently, it was revealed that dislocation-free 〈110〉-oriented CZ-Si crystals as well as 〈100〉-oriented CZ-Si crystals can be grown without the Dash-necking process.