Off-axis RF-sputtered barium titanate thin films for next-generation electro-optic devices

Abstract In this work, we report the growth of 300 nm c -axis oriented barium titanate (BTO) films on (001)-strontium titanate (STO) substrates via off-axis radio frequency (RF) sputtering. The as-grown films exhibit exceptional crystallinity, with a rocking curve full width at half maximum of ∼0.03°, and atomically smooth surface morphology with a root mean square roughness of 0.23 nm, ensuring minimal optical losses. Transmission ellipsometric characterization of the film reveals a record-high electro-optic (EO) coefficient, r 51 ∼ 550 pm V −1 that exceeds by a factor of 3 compared to the previously reported values for RF-sputtered BTO. This high-quality, industry-compatible material paves the way for the development of efficient and compact EO modulators based on hybrid BTO-on-silicon waveguides.

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Publication Details

Journal
Journal of Physics Materials
Published
2025-10-01
DOI
https://doi.org/10.1088/2515-7639/ae0ef0
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
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article

Off-axis RF-sputtered barium titanate thin films for next-generation electro-optic devices

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Journal of Physics Materials
Ferroelectric and Piezoelectric Materials
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Off-axis RF-sputtered barium titanate thin films for next-generation electro-optic devices

Dean P. Brown, Sarvagya Dwivedi, Robert F. Bedford, Arnob Ghosh, Shrivatch Sankar, Md Saiful Islam Sumon, Shamsul Arafin, Fengyuan Yang, Imad I. Faruque, Vincent Stenger, David A. Carpenter, Benjamin Griffin, Robert L. Nelson, Katelyn Lazareno
article en

Abstract

Abstract In this work, we report the growth of 300 nm c -axis oriented barium titanate (BTO) films on (001)-strontium titanate (STO) substrates via off-axis radio frequency (RF) sputtering. The as-grown films exhibit exceptional crystallinity, with a rocking curve full width at half maximum of ∼0.03°, and atomically smooth surface morphology with a root mean square roughness of 0.23 nm, ensuring minimal optical losses. Transmission ellipsometric characterization of the film reveals a record-high electro-optic (EO) coefficient, r 51 ∼ 550 pm V −1 that exceeds by a factor of 3 compared to the previously reported values for RF-sputtered BTO. This high-quality, industry-compatible material paves the way for the development of efficient and compact EO modulators based on hybrid BTO-on-silicon waveguides.

Journal of Physics MaterialsVol. 8(4)
United States Air Force Research Laboratory (US), Wright-Patterson Air Force Base (US), Dayton Clinical Oncology Program (US), The Ohio State University (US), Texas Instruments (United States) (US), University of Sheffield (GB), Silicon Labs (United States) (US)
Openalex Percentile: Top 79%
Ferroelectric and Piezoelectric Materials
DOIOpen Access PDFOpenAlex
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