Ge nanograin-enhanced Si/C composite anodes: anchored interfaces for rapid electron and ion conduction
Ge-modulated Si/C interfaces boost ionic/electronic transport and suppress Si detachment, yielding enhanced rate capability and long-term cycling performance.
Authors
- Aishui Yu (ORCID: https://orcid.org/0000-0002-8135-5123)
- Xintong Xu (ORCID: https://orcid.org/0000-0002-6993-2020)
- Mu Xiao (ORCID: https://orcid.org/0000-0003-2132-340X)
- Tao Huang (ORCID: https://orcid.org/0000-0002-2706-4827)
Institutions
- Fudan University (CN)
- Collaborative Innovation Center of Chemistry for Energy Materials (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ta05658f
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00