One‐Step Laser‐Induced Oxidation and Doping for Tailored p‐Type Conversion of Al‐Doped TiO<sub>2</sub> (Small 39/2025)
Metal Oxide Semiconductors A laser-assisted oxidation and doping strategy enables one-step formation of Al-doped TiO2, achieving p-type conductivity through selective Al diffusion above the threshold laser power. This method overcomes the intrinsic n-type nature of TiO2, offering a CMOS-compatible route for type conversion. The approach provides precise spatial control, enhanced hole transport, and scalability for next-generation oxide electronics and 3D integration. More in article number 2502139, Hyuk-Jun Kwon and co-workers.
Authors
- Byeongmoon Lee (ORCID: https://orcid.org/0000-0001-9306-2435)
- Hyuk‐Jun Kwon (ORCID: https://orcid.org/0000-0002-4767-7444)
- Jae Eun Jang (ORCID: https://orcid.org/0000-0002-8523-1785)
- Junil Kim (ORCID: https://orcid.org/0000-0003-3362-1746)
- Guojian Yang (ORCID: https://orcid.org/0000-0001-8515-9261)
Institutions
- Daegu Gyeongbuk Institute of Science and Technology (KR)
Publication Details
- Journal
- Small
- Published
- 2025-10-01
- DOI
- https://doi.org/10.1002/smll.70300
- Citations
- 2
- Primary Topic
- Catalytic Processes in Materials Science
- Type
- article
- Field-Weighted Citation Impact
- 1.04