Computational analysis on structural, opto-electronic and thermo-electronic properties of Cs <sub>2</sub> CuBiX <sub>6</sub> (X = Br/I) compounds

This paper represents the influence of structural, electronic, optical and thermal properties of Halide double perovskites (HDP) Cs2CuBiBr6 and Cs2CuBiI6 under the effect of pressure, utilizing density functional theory. The impact of pressure was established in the range of 0–30 GPa. The GGA (generalized gradient approximation) method was performed to figure out exchange correlation effects to determine the ground state geometry of the compounds. A tremendous variation was seen in the lattice parameters, band gap, electronic, optical and transport properties via pressure variation. The Tran and Blaha modified Becke Johnson potential was applied to calculate the electronic band calculations. The energy band gap is observed to shrink from (0.932–0.860) eV and (0.736–0.084) eV for Cs2CuBiBr6 and Cs2CuBiI6 in the studied pressure range. The optical spectra reveal interesting trends upon the application of pressure. Thermoelectric properties were examined by using the BoltzTraP code integrated in Wien2k.

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Publication Details

Journal
Journal of Taibah University for Science
Published
2025-10-02
DOI
https://doi.org/10.1080/16583655.2025.2555747
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Computational analysis on structural, opto-electronic and thermo-electronic properties of Cs 2 CuBiX 6 (X = Br/I) compounds

G. Murtaza, Syed Hatim Shah, Shamim Khan, Muhammad Awais Jehangir et al.
Journal of Taibah University for Science
Chalcogenide Semiconductor Thin Films
article

Computational analysis on structural, opto-electronic and thermo-electronic properties of Cs 2 CuBiX 6 (X = Br/I) compounds

G. Murtaza, Syed Hatim Shah, Shamim Khan, Muhammad Awais Jehangir, Nabeel Israr, Muhammad Ibrar
article en

Abstract

This paper represents the influence of structural, electronic, optical and thermal properties of Halide double perovskites (HDP) Cs2CuBiBr6 and Cs2CuBiI6 under the effect of pressure, utilizing density functional theory. The impact of pressure was established in the range of 0–30 GPa. The GGA (generalized gradient approximation) method was performed to figure out exchange correlation effects to determine the ground state geometry of the compounds. A tremendous variation was seen in the lattice parameters, band gap, electronic, optical and transport properties via pressure variation. The Tran and Blaha modified Becke Johnson potential was applied to calculate the electronic band calculations. The energy band gap is observed to shrink from (0.932–0.860) eV and (0.736–0.084) eV for Cs2CuBiBr6 and Cs2CuBiI6 in the studied pressure range. The optical spectra reveal interesting trends upon the application of pressure. Thermoelectric properties were examined by using the BoltzTraP code integrated in Wien2k.

Journal of Taibah University for ScienceVol. 19(1)
Kunming University of Science and Technology (CN), Islamia College University (PK), Hazara University (PK), King Saud University (SA)
Openalex Percentile: Top 73%
Chalcogenide Semiconductor Thin Films
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