Characterization of Nanocrystals of Eu-Doped GaN Powders Obtained via Pyrolysis, Followed by Their Nitridation

Nanocrystals of Eu-doped GaN powders are produced via pyrolysis of a viscous compound made from europium and gallium nitrates. Furthermore, carbohydrazide is used as a fuel and toluene as a solvent; subsequently, a crucial nitridation process is carried out at 1000 °C for one hour. A slight shift of 0.04 degrees toward larger angles was observed for the X-ray diffraction patterns in the Eu-doped GaN powders regarding the undoped GaN powders, while Raman scattering also displayed a slight shift of 10.03 cm−1 toward lower frequencies regarding the undoped GaN powders for the vibration mode, E2(H), in both cases indicating the incorporation of europium atoms into the GaN crystal lattice. A scanning electron microscope micrograph demonstrated a surface morphology for the Eu-doped GaN with a shape similar to elongated platelets with a size of 3.77 µm in length. Energy-dispersive spectroscopy and X-ray photoelectron spectroscopy studies demonstrated the europium elemental contribution in the GaN. The X-ray photoelectron spectroscopy spectrum for gallium demonstrated the binding energies for Ga 2P3/2, Ga 2P1/2, and Eu 3d5/2, which could indicate the incorporation of europium into the GaN and the bonding between gallium and europium atoms. The transmission electron microscope micrograph showed the presence of nanocrystals with an average size of 9.03 nm in length. The photoluminescence spectrum showed the main Eu3+ transition at 2.02 eV (611.69 nm) for europium emission energy, corresponding to the 5D0 ⟶ 7F2 transition of the f shell, which is known as a laser transition.

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Publication Details

Journal
Photonics
Published
2025-10-02
DOI
https://doi.org/10.3390/photonics12100982
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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article

Characterization of Nanocrystals of Eu-Doped GaN Powders Obtained via Pyrolysis, Followed by Their Nitridation

Erick Gastellóu, A. Ramos-Carrazco, Antonio Coyopol, A.M. Herrera et al.
Photonics
GaN-based semiconductor devices and materials
article

Characterization of Nanocrystals of Eu-Doped GaN Powders Obtained via Pyrolysis, Followed by Their Nitridation

Erick Gastellóu, A. Ramos-Carrazco, Antonio Coyopol, A.M. Herrera, José Alberto Luna López, Francisco Brown, Yani D. Ramírez, R. C. Carrillo-Torres, Gustavo A. Hirata, R. Garcı́a, Jorge A. Rodríguez, Godofredo García
article en

Abstract

Nanocrystals of Eu-doped GaN powders are produced via pyrolysis of a viscous compound made from europium and gallium nitrates. Furthermore, carbohydrazide is used as a fuel and toluene as a solvent; subsequently, a crucial nitridation process is carried out at 1000 °C for one hour. A slight shift of 0.04 degrees toward larger angles was observed for the X-ray diffraction patterns in the Eu-doped GaN powders regarding the undoped GaN powders, while Raman scattering also displayed a slight shift of 10.03 cm−1 toward lower frequencies regarding the undoped GaN powders for the vibration mode, E2(H), in both cases indicating the incorporation of europium atoms into the GaN crystal lattice. A scanning electron microscope micrograph demonstrated a surface morphology for the Eu-doped GaN with a shape similar to elongated platelets with a size of 3.77 µm in length. Energy-dispersive spectroscopy and X-ray photoelectron spectroscopy studies demonstrated the europium elemental contribution in the GaN. The X-ray photoelectron spectroscopy spectrum for gallium demonstrated the binding energies for Ga 2P3/2, Ga 2P1/2, and Eu 3d5/2, which could indicate the incorporation of europium into the GaN and the bonding between gallium and europium atoms. The transmission electron microscope micrograph showed the presence of nanocrystals with an average size of 9.03 nm in length. The photoluminescence spectrum showed the main Eu3+ transition at 2.02 eV (611.69 nm) for europium emission energy, corresponding to the 5D0 ⟶ 7F2 transition of the f shell, which is known as a laser transition.

PhotonicsVol. 12(10)
Instituto Tecnológico de Puebla (MX), Universidad Autónoma de Baja California (MX), Universidad de Sonora (MX), Universidad Tecnológica de Puebla, Benemérita Universidad Autónoma de Puebla (MX), Universidad Nacional Autónoma de México (MX)
Openalex Percentile: Top 83%
GaN-based semiconductor devices and materials
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