A study of the electronic structure and mechanical stability of three TiO <sub>2</sub> /CeO <sub>2</sub> interfaces for high-quality core–shell abrasives for efficient polishing

Due to the problems of the easy agglomeration and high polishing defect rates of pure CeO<sub>2</sub> particles, this study constructed a core-shell structured TiO<sub>2</sub>/CeO<sub>2</sub> composite abrasive with the aim of achieving high-quality and efficient polishing. The atomic structure, electronic structure, and mechanical properties of a-TiO<sub>2</sub>(001)/CeO<sub>2</sub>(001), a-TiO<sub>2</sub>(101)/CeO<sub>2</sub>(111) and r-TiO<sub>2</sub>(110)/CeO<sub>2</sub>(111) interfaces and their interfaces containing O vacancies were studied using first principles calculations. The results indicated that the structural stability of the three TiO<sub>2</sub>/CeO<sub>2</sub> interfaces was determined by the number and length of the Ti-O and Ce-O covalent bonds generated in the interface region. The value of adhesion work for the stable a-TiO<sub>2</sub>(001)/CeO<sub>2</sub>(001) interface and the most unstable r-TiO<sub>2</sub>(110)/CeO<sub>2</sub>(111) interface were 2.28 and 0.53 J m<sup>-2</sup>, respectively. Oxygen vacancy defects reduced the work of adhesion and ideal shear strength of the three TiO<sub>2</sub>/CeO<sub>1.94</sub> interfaces. The fracture of Ti-O bonds in the interface region was the reason for the failure of the a-TiO<sub>2</sub>(001)/CeO<sub>2</sub>(001) and a-TiO<sub>2</sub>(101)/CeO<sub>1.94</sub>(111) interfaces, while the failure of other interfaces was mainly caused by the fracture of Ce-O bonds in the interface region. Under shear strain, the chemical activities of the r-TiO<sub>2</sub>(110)/CeO<sub>2</sub>(111) and r-TiO<sub>2</sub>(110)/CeO<sub>1.94</sub>(111) interfaces were reduced.

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Publication Details

Journal
Physical Chemistry Chemical Physics
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cp03655k
Primary Topic
Advanced Surface Polishing Techniques
Type
article
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article

A study of the electronic structure and mechanical stability of three TiO 2 /CeO 2 interfaces for high-quality core–shell abrasives for efficient polishing

Xin Tan, Yanan Cao, Xinze Zhang, Huiling Jia et al.
Physical Chemistry Chemical Physics
Advanced Surface Polishing Techniques
article

A study of the electronic structure and mechanical stability of three TiO 2 /CeO 2 interfaces for high-quality core–shell abrasives for efficient polishing

Xin Tan, Yanan Cao, Xinze Zhang, Huiling Jia, Jie Zhang
article en

Abstract

Due to the problems of the easy agglomeration and high polishing defect rates of pure CeO<sub>2</sub> particles, this study constructed a core-shell structured TiO<sub>2</sub>/CeO<sub>2</sub> composite abrasive with the aim of achieving high-quality and efficient polishing. The atomic structure, electronic structure, and mechanical properties of a-TiO<sub>2</sub>(001)/CeO<sub>2</sub>(001), a-TiO<sub>2</sub>(101)/CeO<sub>2</sub>(111) and r-TiO<sub>2</sub>(110)/CeO<sub>2</sub>(111) interfaces and their interfaces containing O vacancies were studied using first principles calculations. The results indicated that the structural stability of the three TiO<sub>2</sub>/CeO<sub>2</sub> interfaces was determined by the number and length of the Ti-O and Ce-O covalent bonds generated in the interface region. The value of adhesion work for the stable a-TiO<sub>2</sub>(001)/CeO<sub>2</sub>(001) interface and the most unstable r-TiO<sub>2</sub>(110)/CeO<sub>2</sub>(111) interface were 2.28 and 0.53 J m<sup>-2</sup>, respectively. Oxygen vacancy defects reduced the work of adhesion and ideal shear strength of the three TiO<sub>2</sub>/CeO<sub>1.94</sub> interfaces. The fracture of Ti-O bonds in the interface region was the reason for the failure of the a-TiO<sub>2</sub>(001)/CeO<sub>2</sub>(001) and a-TiO<sub>2</sub>(101)/CeO<sub>1.94</sub>(111) interfaces, while the failure of other interfaces was mainly caused by the fracture of Ce-O bonds in the interface region. Under shear strain, the chemical activities of the r-TiO<sub>2</sub>(110)/CeO<sub>2</sub>(111) and r-TiO<sub>2</sub>(110)/CeO<sub>1.94</sub>(111) interfaces were reduced.

Physical Chemistry Chemical PhysicsVol. 27(42)
Inner Mongolia University of Science and Technology (CN), Baotou Research Institute of Rare Earths (CN)
Openalex Percentile: Top 74%
Advanced Surface Polishing Techniques
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