Tunable Schottky barrier of GaSe/graphene heterostructure <i>via</i> asymmetric O doping
By asymmetric O doping modulation, the Schottky barrier of a GaSe/graphene heterostructure can be effectively lowered.
Authors
- Guanjun Xiao (ORCID: https://orcid.org/0000-0002-7013-1378)
- Xinguo Ma (ORCID: https://orcid.org/0000-0002-5651-9720)
- Yanru Zhou (ORCID: https://orcid.org/0000-0001-9476-0630)
- Weiping Ding (ORCID: https://orcid.org/0000-0002-3180-7347)
- Jiaqi Wang (ORCID: https://orcid.org/0000-0001-7049-2758)
- Biao Ma (ORCID: https://orcid.org/0000-0003-3062-583X)
Institutions
- Hubei University of Technology (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc03071d
- Primary Topic
- Solid-state spectroscopy and crystallography
- Type
- article
- Field-Weighted Citation Impact
- 0.00