THERMODYNAMIC MODELING OF PHASE FORMATION CONDITIONS IN THE Si-O-C-H–He AND Si-O-C–H–N–He SYSTEMS

Thermodynamic modeling of the film synthesis process from the gas phase in the Si–O–C–H–He and Si–O–C–H–N–He systems during the decomposition of hexamethyldisiloxane was performed. It was shown that various phase complexes containing silicon oxide, carbide, and nitride can be obtained in CVD processes of such systems.