Silicon Sensor Characterization Testbench using the Transient Current Technique

The realization of a testbench for the characterization of silicon sensors using the Transient Current Technique (TCT) is presented. The experimental setup relies on near infrared (IR) pulsed laser light with very short pulses and a localized beam spot which mirror the passage of a minimum ionizing particle (MIP) through the sensor. The setup is able to characterize sensors used in radiation detection with high spatial precision of the order of few $\mu \mathrm{m}$ along with high resolution in the time domain. The testbench is especially aimed at the characterization of silicon sensors peforming simultaneous spatial and time reconstruction for experiments running in the future upgrade of the Large Hadron Collider (LHC) particle accelerator at the European Organization for Nuclear Research (CERN).